Sign In | Join Free | My himfr.com
Home > Ic Integrated Circuit >

IPD80R1K4P7 N Channel Mosfet Transistor TO-252

HK LIANYIXIN INDUSTRIAL CO., LIMITED
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now
    Buy cheap IPD80R1K4P7 N Channel Mosfet Transistor TO-252 from wholesalers
     
    Buy cheap IPD80R1K4P7 N Channel Mosfet Transistor TO-252 from wholesalers
    • Buy cheap IPD80R1K4P7 N Channel Mosfet Transistor TO-252 from wholesalers
    • Buy cheap IPD80R1K4P7 N Channel Mosfet Transistor TO-252 from wholesalers

    IPD80R1K4P7 N Channel Mosfet Transistor TO-252

    Ask Lasest Price
    Brand Name : INFINEON
    Model Number : IPD80R1K4P7
    Payment Terms : D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 37830pcs
    Delivery Time : 3
    Price : Negotiate
    • Product Details
    • Company Profile

    IPD80R1K4P7 N Channel Mosfet Transistor TO-252

    ISO9001.pdf

    Application:
    IPD80R1K4P7 is an N-channel MOSFET transistor commonly used in high-efficiency DC-DC converters and power supply applications. It can operate at low voltage and has low resistance and high switching speed, making it very suitable for use in low voltage applications.
    Conclusion:
    IPD80R1K4P7 has the following characteristics:
    Very low switching and conduction losses;
    High voltage limit, capable of operating at high voltage;
    High switching speed enables efficient DC-DC converters;
    High temperature stability, capable of working in high temperature environments.
    Parameters:
    The key parameters of IPD80R1K4P7 are as follows:
    Rated current: 80A;
    Rated voltage: 40V;
    Maximum drain power supply voltage: 55V;
    Static resistance: 1.4m Ω;
    Typical capacitance: 2000pF;
    Working temperature range: -55 ° C~+175 ° C;
    Packaging type: TO-252 (DPAK).

    Product Technical Specifications
    EU RoHSCompliant with Exemption聽
    ECCN (US)EAR99
    Part StatusUnconfirmed
    HTS8541.29.00.95
    SVHCYes
    SVHC Exceeds ThresholdYes
    AutomotiveNo
    PPAPNo
    Product CategoryPower MOSFET
    ConfigurationSingle
    Process TechnologyCoolMOS P7
    Channel ModeEnhancement
    Channel TypeN
    Number of Elements per Chip1
    Maximum Drain Source Voltage (V)800
    Maximum Gate Source Voltage (V)20
    Maximum Gate Threshold Voltage (V)3.5
    Maximum Continuous Drain Current (A)4
    Maximum Gate Source Leakage Current (nA)1000
    Maximum IDSS (uA)1
    Maximum Drain Source Resistance (mOhm)1400@10V
    Typical Gate Charge @ Vgs (nC)10@10V
    Typical Gate Charge @ 10V (nC)10
    Typical Input Capacitance @ Vds (pF)250@500V
    Maximum Power Dissipation (mW)32000
    Typical Fall Time (ns)20
    Typical Rise Time (ns)8
    Typical Turn-Off Delay Time (ns)40
    Typical Turn-On Delay Time (ns)10
    Minimum Operating Temperature (掳C)-55
    Maximum Operating Temperature (掳C)150
    PackagingTape and Reel
    MountingSurface Mount
    Package Height2.41(Max)
    Package Width6.22(Max)
    Package Length6.73(Max)
    PCB changed2
    TabTab
    Supplier PackageDPAK
    Pin Count3
    Quality IPD80R1K4P7 N Channel Mosfet Transistor TO-252 for sale
    Inquiry Cart 0
    Send your message to this supplier
     
    *From:
    *To: HK LIANYIXIN INDUSTRIAL CO., LIMITED
    *Subject:
    *Message:
    Characters Remaining: (0/3000)