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IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

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    Buy cheap IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor from wholesalers
     
    Buy cheap IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor from wholesalers
    • Buy cheap IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor from wholesalers

    IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

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    Brand Name : INFINEON
    Model Number : IPD082N10N3
    Payment Terms : D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 57830pcs
    Delivery Time : 3
    Price : Negotiate
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    IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor


    ISO9001.pdf

    IPD082N10N3 is an N channel MOSFET transistor. The following are its applications, conclusions, and parameters:
    Application:
    Used as a high-voltage and high-power load switch
    Used as a switch for converters and regulators
    Conclusion:
    High voltage capability: Vds=100V
    Low conduction resistance: Rds (on)=8.2m Ω (typ.)
    Fast switching speed: td (on)=16ns (typ.), td (off)=60ns (typ.)
    High temperature performance: can operate at temperatures up to 175 ℃
    Complies with RoHS directives and lead-free requirements
    Parameters:
    Vds (drain source voltage): 100V
    Vgs (gate source voltage): ± 20V
    Id (drain current): 80A
    Rds (on) (conduction resistance): 8.2m Ω (typ.)
    Qg (gate charge): 135nC (typ.)
    Td (on) (start delay time): 16ns (typ.)
    Td (off) (shutdown delay time): 60ns (typ.)
    Tj (junction temperature): 175 ℃
    Complies with RoHS directives and lead-free requirements.

    Product Technical Specifications
    EU RoHSCompliant with Exemption聽
    ECCN (US)EAR99
    Part StatusUnconfirmed
    SVHCYes
    SVHC Exceeds ThresholdYes
    AutomotiveUnknown
    PPAPUnknown
    Product CategoryPower MOSFET
    ConfigurationSingle
    Process TechnologyOptiMOS 3
    Channel ModeEnhancement
    Channel TypeN
    Number of Elements per Chip1
    Maximum Drain Source Voltage (V)100
    Maximum Gate Source Voltage (V)卤20
    Maximum Gate Threshold Voltage (V)3.5
    Maximum Continuous Drain Current (A)80
    Maximum Gate Source Leakage Current (nA)100
    Maximum IDSS (uA)1
    Maximum Drain Source Resistance (mOhm)8.2@10V
    Typical Gate Charge @ Vgs (nC)42@10V
    Typical Gate Charge @ 10V (nC)42
    Typical Input Capacitance @ Vds (pF)2990@50V
    Maximum Power Dissipation (mW)125000
    Typical Fall Time (ns)8
    Typical Rise Time (ns)42
    Typical Turn-Off Delay Time (ns)31
    Typical Turn-On Delay Time (ns)18
    Minimum Operating Temperature (掳C)-55
    Maximum Operating Temperature (掳C)175
    PackagingTape and Reel
    MountingSurface Mount
    Package Height2.41(Max)
    Package Width6.22(Max)
    Package Length6.73(Max)
    PCB changed2
    TabTab
    Standard Package NameTO-252
    Supplier PackageDPAK
    Pin Count3
    Lead ShapeGull-wing
    Quality IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor for sale
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