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IPD320N20N3G Ic Integrated Circuit TO-252

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    Buy cheap IPD320N20N3G Ic Integrated Circuit TO-252 from wholesalers
     
    Buy cheap IPD320N20N3G Ic Integrated Circuit TO-252 from wholesalers
    • Buy cheap IPD320N20N3G Ic Integrated Circuit TO-252 from wholesalers
    • Buy cheap IPD320N20N3G Ic Integrated Circuit TO-252 from wholesalers

    IPD320N20N3G Ic Integrated Circuit TO-252

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    Brand Name : INFINEON
    Model Number : IPD320N20N3G
    Payment Terms : D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 97830pcs
    Delivery Time : 3
    Price : Negotiate
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    IPD320N20N3G Ic Integrated Circuit TO-252

    ISO9001.pdf

    Application: IPD320N20N3G is an N-channel MOSFET transistor used for high-efficiency DC-DC converters and inverter applications. It can operate at high voltage, with low conduction resistance and high switching speed.
    Conclusion: IPD320N20N3G has the characteristics of high efficiency, high voltage, and low conduction resistance, making it suitable for high-power DC-DC converters and inverters. It can improve the energy efficiency of the system, reduce power loss, and have a longer service life.
    Parameters:
    Vds (max)=200V (maximum withstand voltage)
    Id=320A (maximum drain current)
    Rds (on)=3.3m Ω (conduction resistance)
    Qg=230nC (gate charge)
    Vgs (th)=4V (gate threshold voltage)
    Ciss=12300pF (input capacitance)
    Coss=1170pF (output capacitance)
    Crss=570pF (reverse transmission capacitance)

    Product Technical Specifications
    EU RoHSCompliant with Exemption聽
    ECCN (US)EAR99
    Part StatusUnconfirmed
    SVHCYes
    SVHC Exceeds ThresholdYes
    AutomotiveNo
    PPAPNo
    Product CategoryPower MOSFET
    ConfigurationSingle
    Process TechnologyOptiMOS 3
    Channel ModeEnhancement
    Channel TypeN
    Number of Elements per Chip1
    Maximum Drain Source Voltage (V)200
    Maximum Gate Source Voltage (V)卤20
    Maximum Gate Threshold Voltage (V)4
    Operating Junction Temperature (掳C)-55 to 175
    Maximum Continuous Drain Current (A)34
    Maximum Gate Source Leakage Current (nA)100
    Maximum IDSS (uA)1
    Maximum Drain Source Resistance (MOhm)32@10V
    Typical Gate Charge @ Vgs (nC)22@10V
    Typical Gate Charge @ 10V (nC)22
    Typical Gate to Drain Charge (nC)3
    Typical Gate to Source Charge (nC)8
    Typical Reverse Recovery Charge (nC)500
    Typical Switch Charge (nC)5
    Typical Input Capacitance @ Vds (pF)1770@100V
    Typical Reverse Transfer Capacitance @ Vds (pF)4@100V
    Minimum Gate Threshold Voltage (V)2
    Typical Output Capacitance (pF)135
    Maximum Power Dissipation (mW)136000
    Typical Fall Time (ns)4
    Typical Rise Time (ns)9
    Typical Turn-Off Delay Time (ns)21
    Typical Turn-On Delay Time (ns)11
    Minimum Operating Temperature (掳C)-55
    Maximum Operating Temperature (掳C)175
    PackagingTape and Reel
    Maximum Pulsed Drain Current @ TC=25掳C (A)136
    Maximum Junction Ambient Thermal Resistance on PCB (掳C/W)50
    Typical Diode Forward Voltage (V)0.9
    Typical Gate Plateau Voltage (V)4.4
    Typical Reverse Recovery Time (ns)110
    Maximum Diode Forward Voltage (V)1.2
    Typical Gate Threshold Voltage (V)3
    Maximum Positive Gate Source Voltage (V)20
    MountingSurface Mount
    Package Height2.41(Max)
    Package Width6.22(Max)
    Package Length6.73(Max)
    PCB changed2
    TabTab
    Standard Package NameTO-252
    Supplier PackageDPAK
    Pin Count3
    Lead ShapeGull-wing
    Quality IPD320N20N3G Ic Integrated Circuit TO-252 for sale
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